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mtd: nand: samsung: Disable subpage writes on E-die NAND
authorLadislav Michl <ladis@linux-mips.org>
Tue, 9 Jan 2018 13:19:11 +0000 (14:19 +0100)
committerBoris Brezillon <boris.brezillon@free-electrons.com>
Wed, 10 Jan 2018 08:45:04 +0000 (09:45 +0100)
commit09ec417b0ea8bdab18e78d3d55e0a5fb7d54f18c
tree3a51df5e12089c4f29fb877629c8f0d06ed141d3tree | snapshot
parent6cbefbdcec41bf725b308288dcb200a6efc3339fcommit | diff
mtd: nand: samsung: Disable subpage writes on E-die NAND

Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E)
does not support partial page programming, so disable subpage writes
for it. Manufacturing process is stored in lowest two bits of 5th ID
byte.

Signed-off-by: Ladislav Michl <ladis@linux-mips.org>
Signed-off-by: Boris Brezillon <boris.brezillon@free-electrons.com>
drivers/mtd/nand/nand_samsung.c diff | blob | history
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